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Semiconductor Devices

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Single, Dual and Half-Bridge Diodes


Semiconductor Devices





Single Diode
SD106*-9
Dual Diodes with
Common Catode
DDC106-9
Dual Diodes with Common Anode
DDA106-9
Half Bridge Diodes
BD106-9
Case SOT-23
schdiod1.gif (336 bytes) schdiod2.gif (448 bytes) schdiod3.gif (453 bytes) schdiod4.gif (474 bytes) sot23new.gif (4971 bytes)

1- A

2-K

3-

1-A1

2-K

3-A2

1-K1

2-A

3-K2

1-A1

2-K1-A2

3-K2

 



Maximum Rating


Rating

Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 400 V
Forward Current
SD106A-9
DDC106-9, DDA106-9, BD106-9
SD106B-9
IF
150
150
200
mA
Repetitive Peak Forward Current
SD106A-9
DDC106-9, DDA106-9, BD106-9
SD106B-9
IFRM
300
300
1000
mA
Surge non Repetitive Forward Current IFSM 2 A
Power Dissipation PD 225 mW
Storage and Junction Temperature Range TSTG
TJ
-55 to 125
150
°C
°C



Thermal Characteristics


Characteristic

Symbol Value Unit
Thermal Resistance - Junction to Ambient RJA 600 °C/W
Thermal Resistance - Junction to Caset RJC 260 °C/W

Electrical Characteristics


Characteristic

Symbol Min Max Unit
Forward Voltage 
SD106A-9 (IF=150mA)
DDC106-9, DDA106-9, BD106-9 (IF=150mA)
SD106B-9  (IF=200mA)
VF
1,2
1,2
1,0

1,6
1,6
1,4
V
Reverse Current (VR= 400V)
TA=+25°C
TA=+100°C
IR - 1
10
µA
Capacitance  (VR=0)
SD106A-9
DDC106-9, DDA106-9, BD106-9
SD106B-9
C -
1
1
5
pF


* Before order the complementary parameters must defined more precisely.

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