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Thyristor KU118G-9


Semiconductor Devices




Purpose:

PNPN Thyristor KU118G-9 designed for hilf-wave AC control application, high volume consumer applications such as reley and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

Package for Surface Mounting .
Sensitive Gate
Glass Passivated Junction for Reliability and Uniformity.

· VDRM = 400V
· ITRMS = 0,2A
· IGT < 200
µA

VA-characteristic
X - 150V/div
Y- 0,2mA/div

va118.gif (7543 bytes)
VA-characteristic

Symbol

SOT-23

sch118eng.gif (1200 bytes)

sot23new.gif (4971 bytes)
1-C,   2-A,    3-G




Maximum Rating (T=25°C)


Parameter

Symbol

Rating

Unit

Test condition

Peak Repetitive Forward Voltage

VDRM

400

V

TJ=-40°C to +125°C,
RGK =1000 Ohms

Repetitive Peak Reverse Voltage

VRRM

5

V

TJ=-40°C to 125°C

On-State Current

ITRMS

0,2

A

All Condition Angles, TC=40°C

Peak Reverse Gate Voltage

VGRM

5,0

-

IGR=10mA

Peak Gate Current

IGM

1

A

10 ms max

Peak Gate Dissipation

PGM

2

W

10 ms max

Operating Temperature

TJ

-40 to +125

°C

-
Storage Temperature

TSTG

-40 to +150

°C

-

Thermal Characteristics

Characteristic

Symbol Max Unit
 Thermal Resistance, Junction to Ambient RJA 600 °C/W
 Thermal Resistance, Junction to Case RJC 260 °C/W



Electrical Characteristics (T=25°C)

Characteristic

Symbol

Min

Max

Unit

Test Condition

Off State Leakage Current

IDRM

 

100

m A

VD=VDRM, RGK=1000 Ohms, TJ=125°C

Off State Leakage Current

IDRM

 

10

m A

VD=VDRM, RGK=1000 Ohms, TJ=25°C

On State Voltage

VT

 

1,93

V

IT=0,5A, TJ=25°C

Gate Trigger Current

IGT

 

200

m A

VD=6V, RL=100 Ohms

Gate Trigger Voltage

VGT

 

0,8

V

VD=6V, RL=100 Ohms

Holding Current

IH

 

5

mA

RGK=1000 Ohms





* Before order the complementary parameters must defined more precisely.

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